Title :
Determination of SEU parameters of NMOS and CMOS SRAMs
Author :
McNulty, P.J. ; Bearnvais, W.I. ; Roth, D.R.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
Procedures for determining the SEU parameters for advanced memory devices are demonstrated for CMOS and resistor-loaded NMOS SRAMs. The dimensions of the sensitive volume are either obtained from charge collection measurements on test structures or estimated from similar measurements on the SRAMs themselves. Values of the critical charge determined from simple proton measurements agree with the values obtained for three SRAMs from extensive heavy-ion data
Keywords :
CMOS integrated circuits; MOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; proton effects; CMOS SRAMs; SEU parameters; advanced memory devices; charge collection measurements; critical charge; heavy-ion data; proton measurements; resistor-loaded NMOS SRAMs; test structures; Charge measurement; Circuits; Current measurement; Extraterrestrial measurements; MOS devices; Pulse amplifiers; Pulse measurements; Random access memory; Testing; Volume measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
