Title :
SEU hardened memory cells for a CCSDS Reed-Solomon encoder
Author :
Whitaker, Sterling ; Canaris, John ; Liu, Kathy
Author_Institution :
NASA Space Eng. Res. Center for VLSI Syst. Design, Idaho Univ., Moscow, ID, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
A design technique to harden CMOS memory circuits against single event upset (SEU) in the space environment is reported. The design technique provides a recovery mechanism which is independent of the shape of the upsetting event. A RAM cell and flip-flop design are presented to demonstrate the method. The flip-flop was used in the control circuitry for a Reed-Solomon encoder designed for the Space Station and Explorer platforms
Keywords :
CMOS integrated circuits; encoding; flip-flops; integrated memory circuits; logic design; radiation hardening (electronics); CCSDS Reed-Solomon encoder; CMOS memory circuits; Explorer platforms; RAM cell; SEU hardened memory cells; Space Station; control circuitry; design technique; flip-flop design; single event upset; space environment; CMOS process; Circuits; Design engineering; NASA; Random access memory; Read-write memory; Reed-Solomon codes; Single event upset; Space stations; Very large scale integration;
Journal_Title :
Nuclear Science, IEEE Transactions on
