DocumentCode
817242
Title
A GaAsMISFET using an MBE-grown CaF/sub 2/ gate insulator layer
Author
Waho, Takao ; Yanagawa, Fumihiko
Author_Institution
LSI Lab., NTT, Atsugi, Japan
Volume
9
Issue
10
fYear
1988
Firstpage
548
Lastpage
549
Abstract
The CaF/sub 2/ layer and an undoped GaAs channel layer grown by molecular beam epitaxy (MBE) on a semi-insulating GaAs
Keywords
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; molecular beam epitaxial growth; 1 micron; 64 mS; CaF/sub 2/-GaAs interface; III-V semiconductors; MBE-grown CaF/sub 2/; MISFET; WSi/sub x/ gate metal; gate insulator; gate-length; molecular beam epitaxy; self-aligned process; semiinsulating; transconductance; undoped GaAs channel layer; Crystallization; Dielectric materials; Etching; FETs; Gallium arsenide; Insulation; MISFETs; Molecular beam epitaxial growth; Substrates; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.17840
Filename
17840
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