Title :
Guidelines for predicting single-event upsets in neutron environments [RAM devices]
Author :
Letaw, John R. ; Normand, Eugene
Author_Institution :
Severn Commun. Corp., Millersville, MD, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
A simple, graphical technique for estimating SEU rates in most neutron environments is provided. The technique is based on recently improved burst generation rate estimates for silicon. The method considers the point energy deposition from elastic, inelastic, and spallation reactions of neutrons in silicon over a wide range of incident energies (0.1 MeV to 1000 MeV). Alpha-particle energy deposition, which may cause errors in some devices, varies nonlinearly with increasing sensitive volume and is not considered
Keywords :
SRAM chips; bipolar integrated circuits; environmental testing; integrated circuit testing; neutron effects; random-access storage; 0.1 to 1000 MeV; SEU rates; SRAM; Si; bipolar RAM; elastic reactions; graphical technique; inelastic reactions; neutron environments; neutron induced error function; point energy deposition; single-event upsets; spallation reactions; Aerospace electronics; Atmosphere; Error analysis; Guidelines; Ionization; Neutrons; Protons; Silicon; Single event transient; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
