DocumentCode :
817706
Title :
Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100- \\mu m Stripe Width
Author :
Crump, P. ; Wenzel, H. ; Erbert, G. ; Ressel, P. ; Zorn, M. ; Bugge, F. ; Einfeldt, S. ; Staske, R. ; Zeimer, U. ; Pietrzak, A. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Volume :
20
Issue :
16
fYear :
2008
Firstpage :
1378
Lastpage :
1380
Abstract :
Many solid state laser systems rely on transverse- magnetic polarized 808-nm diode lasers, whose efficiency is limited by the transparency current of the quantum well and whose peak power is limited by facet failure. Using optimized epitaxial growth, low voltage designs, and optimized facet reflectivity, we demonstrate 70% power conversion efficiency at 80 W in 1-cm laser bars under continuous-wave (CW) test conditions. We assess peak power limits in single emitters and find that 100-mum stripe lasers roll thermally under the CW condition at 13 W without failure, then reach >50 W under 300-ns pulse condition, where they fail at internal defects.
Keywords :
laser beams; laser modes; optimisation; power conversion; semiconductor lasers; semiconductor quantum wells; transparency; TM polarized laser bar; continuous-wave testing; optimized epitaxial growth; optimized facet reflectivity; passively cooled laser; power 13 W; power 55 W; power 80 W; power conversion efficiency; quantum well; semiconductor lasers; size 100 mum; solid state laser system; time 300 ns; transparency current; transverse-magnetic polarized diode laser; wavelength 808 nm; Bars; Design optimization; Diode lasers; Epitaxial growth; Low voltage; Optical design; Polarization; Power conversion; Power lasers; Solid lasers; Power conversion; quantum wells; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.926827
Filename :
4579309
Link To Document :
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