Title :
A comparison of methods for simulating low dose-rate gamma ray testing of MOS devices
Author :
Jenkins, William C. ; Martin, Richard L.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
A radiation testing procedure is presented and experimentally verified in which a series of high-dose-rate irradiations, with 100°C annealing under bias between irradiations, is used to simulate a continuous low-dose-rate irradiation. This approach can reduce low-dose-rate testing time by as much as a factor of 100 with respect to actual low-dose-rate irradiations. The procedure also provides detailed information on the behavior of CMOS parts at low dose-rates which are of interest to many satellite systems
Keywords :
CMOS integrated circuits; annealing; environmental testing; gamma-ray effects; integrated circuit testing; radiation hardening (electronics); CMOS parts; MOS devices; annealing; high-dose-rate irradiations; low dose-rate gamma ray testing; radiation testing procedure; satellite systems; simulation; Analytical models; Appropriate technology; CMOS technology; Failure analysis; Laboratories; MOS devices; Simulated annealing; Space technology; System testing; Time measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
