RF Frequency Doubling Using a Silicon p-i-n Diode-Based Mach–Zehnder Modulator

Author

Park, Jeong-Woo ; You, Jong-Bum ; Lee, Jong-Moo ; Kim, Gyungock

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon

Volume

20

Issue

16

fYear

2008

Firstpage

1384

Lastpage

1386

Abstract

We demonstrate frequency doubling at 1 GHz using a new silicon Mach-Zehnder modulator (MZM). Modulation of the refractive index of silicon for an MZM action is achieved via the injection/depletion of electrons and holes in a p-i-n diode. The silicon MZM used in the experiment shows high phase-shift efficiency and a V_piL_pi of 1.88times10^-2Vldrcm which is nearly 350 times smaller than those of previously reported LiNbO₃-based MZM. Also, a theoretical analysis of frequency doubling in the time domain shows good agreement with the experimental results.

Keywords

electro-optical modulation; lithium compounds; microwave photonics; optical harmonic generation; p-i-n photodiodes; photorefractive materials; refractive index; silicon; LiNbO₃; Mach-Zehnder modulator; RF frequency doubling; Si; electron depletion; electron injection; frequency 1 GHz; phase-shift efficiency; refractive index modulation; silicon p-i-n diode; Optical harmonic generation; Optical refraction; Optical variables control; Optical waveguides; P-i-n diodes; PIN photodiodes; Radio frequency; Refractive index; Silicon; Voltage; Modulator; photonic integrated circuit; silicon-on-insulator; waveguide modulator;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.926831

Filename

4579330