Title :
Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs-GaAs structure for 0.48-μm applications
Author :
Fallahi, Mahmoud ; Chatenoud, Frangoise ; Dion, Michel ; Templeton, Ian ; Barber, Richard ; Thompson, Jim
Author_Institution :
Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
6/1/1995 12:00:00 AM
Abstract :
In this paper, we report on the design and fabrication of electrically-pumped circular-grating surface-emitting DBR lasers for operation in the 0.98-μm wavelength range. The layer structure with InGaAs-GaAs-AlGaAs strained multiquantum-wells was obtained by one-step epitaxial growth. Circular gratings are defined by electron-beam lithography around circular gain sections of different diameters. Low threshold CW operation as low as 26 mA for a 60-μm diameter gain section, and high-power pulsed operation of over 120 mW for a 100-μm diameter gain region are demonstrated. A quasi-circular far-field pattern with a divergence of about 1° is obtained
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; electron beam lithography; epitaxial growth; gallium arsenide; indium compounds; optical design techniques; optical fabrication; semiconductor growth; semiconductor lasers; 0.98 mum; 100 mum; 120 mW; 26 mA; 60 mum; DBR lasers; InGaAs-GaAs structure; InGaAs-GaAs-AlGaAs; InGaAs-GaAs-AlGaAs strained multiquantum-wells; circular gain sections; circular-grating surface-emitting distributed Bragg reflector lasers; electrically-pumped; electron-beam lithography; gain section; high-power pulsed operation; low threshold CW operation; one-step epitaxial growth; quasi-circular far-field pattern; Distributed Bragg reflectors; Fiber lasers; Gratings; Laser feedback; Laser modes; Laser theory; Optical design; Optical device fabrication; Optical surface waves; Surface emitting lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/2944.401219
