Title :
Solution-Processed Zirconium Oxide Gate Insulators for Top Gate and Low Operating Voltage Thin-Film Transistor
Author :
Yana Gao ; Jianhua Zhang ; Xifeng Li
Author_Institution :
Key Lab. of Adv. Display & Syst. Applic. of Minist. of Educ., Shanghai Univ., Shanghai, China
Abstract :
We report a solution-processed a top gate indium-gallium-zinc oxide thin film transistors (IGZO TFTs) with high- k zirconium oxide (ZrOx) dielectric. Both the dielectrics and electrodes were fabricated by spin coating or screen printing. The ZrOx exhibits an amorphous structure and smooth enough to be used as a gate insulator for TFT. The TFT with maximum process temperature of 300 °C had a saturation mobility of 0.2 cm 2/V·s, an on/off ratio of 103, a threshold voltage of 0.3 V, and the subthreshold swing is 0.34 V/decade.
Keywords :
electrodes; gallium compounds; indium compounds; insulators; spin coating; thin film transistors; zinc compounds; zirconium compounds; InGaZnO; ZrO; electrodes; high- k dielectric; screen printing; solution-processed zirconium oxide gate insulators; spin coating; temperature 300 C; thin-film transistor; voltage 0.3 V; Dielectrics; Electrodes; Films; High K dielectric materials; Logic gates; Printing; Thin film transistors; Solution-processed; thin-film transistors (TFTs); top gate; zirconium oxide (ZrOx);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2015.2438955
