Author :
Ferlet-Cavrois, V. ; Paillet, P. ; McMorrow, D. ; Torres, A. ; Gaillardin, M. ; Melinger, J.S. ; Knudson, A.R. ; Campbell, A.B. ; Schwank, J.R. ; Vizkelethy, G. ; Shaneyfelt, M.R. ; Hirose, K. ; Faynot, O. ; Jahan, C. ; Tosti, L.
Abstract :
This paper investigates the transient response of 50-nm gate length fully and partially depleted SOI and bulk devices to pulsed laser and heavy ion microbeam irradiations. The measured transient signals on 50-nm fully depleted devices are very short, and the collected charge is small compared to older 0.25-μm generation SOI and bulk devices. We analyze in detail the influence of the SOI architecture (fully or partially depleted) on the pulse duration and the amount of bipolar amplification. For bulk devices, the doping engineering is shown to have large effects on the duration of the transient signals and on the charge collection efficiency.
Keywords :
MOSFET; ion beam effects; laser beam effects; nanoelectronics; semiconductor device measurement; silicon-on-insulator; transient response; 50 nm; NMOS device; Si; bipolar amplification; bulk transistors; deca-nanometer devices; doping engineering; fully depleted SOI; gate length; heavy ion microbeam irradiation; partially depleted SOI; pulsed laser irradiation; transient current; transient pulse direct measurement; transient response; Aerospace electronics; Circuits; Costs; Degradation; Laboratories; Optical pulses; Production; Pulse amplifiers; Pulse measurements; Space technology; Collected charge; SOI and bulk transistors; heavy ion; pulsed laser; transient current;
