DocumentCode :
818269
Title :
Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design
Author :
Olson, Brian D. ; Ball, Dennis R. ; Warren, Kevin M. ; Massengill, Lloyd W. ; Haddad, Nadim F. ; Doyle, Scott E. ; McMorrow, Dale
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Volume :
52
Issue :
6
fYear :
2005
Firstpage :
2132
Lastpage :
2136
Abstract :
A novel mechanism for upset is seen in a commercially available 0.25 μm 10-T SEE hardened SRAM cell. Unlike traditional multiple node charge collection in which diffusions near a single event strike collect the deposited carriers, this new mechanism involves direct drift-diffusion collection at an NFET transistor in conjunction with parasitic bipolar conduction in nearby PFET transistors. The charge collection with the parasitic bipolar conduction compromise the SEE hardened design, thus causing upsets. The mechanism was identified using laser testing and three-dimensional TCAD simulations.
Keywords :
SRAM chips; digital simulation; field effect memory circuits; radiation hardening (electronics); technology CAD (electronics); 0.25 micron; NFET transistor; PFET transistor; SEE hardened SRAM cell; direct drift-diffusion collection; highly-scaled SRAM design; laser testing; minority carriers; parasitic bipolar conduction; single event charge sharing; single event strike; single event upset; three-dimensional TCAD simulation; traditional multiple node charge collection; CMOS technology; Circuit simulation; Circuit testing; Computational modeling; Computer simulation; Laboratories; Random access memory; SPICE; Single event upset; State feedback; Charge sharing; parasitic bipolar; single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.860684
Filename :
1589173
Link To Document :
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