• DocumentCode
    818367
  • Title

    Coupled electro-thermal Simulations of single event burnout in power diodes

  • Author

    Albadri, A.M. ; Schrimpf, R.D. ; Walker, D.G. ; Mahajan, S.V.

  • Author_Institution
    Electr. Eng. Dept., Vanderbilt Univ., Nashville, TN, USA
  • Volume
    52
  • Issue
    6
  • fYear
    2005
  • Firstpage
    2194
  • Lastpage
    2199
  • Abstract
    Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers.
  • Keywords
    ion beam effects; power MOSFET; power semiconductor diodes; semiconductor device breakdown; semiconductor process modelling; avalanche multiplication; carbon ion; catastrophic failures; constituent materials; coupled electrothermal model; destructive failures; high reverse-bias voltage; high-energy particles; ion-generated carriers; local heating; power MOSFET; power diodes; Bipolar transistors; Diodes; Discrete event simulation; Electric breakdown; Electrothermal effects; Failure analysis; Heating; MOSFETs; Temperature; Voltage; Avalanche multiplication; coupled electro-thermal simulations; single event burnout (SEB);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.860691
  • Filename
    1589182