DocumentCode
818367
Title
Coupled electro-thermal Simulations of single event burnout in power diodes
Author
Albadri, A.M. ; Schrimpf, R.D. ; Walker, D.G. ; Mahajan, S.V.
Author_Institution
Electr. Eng. Dept., Vanderbilt Univ., Nashville, TN, USA
Volume
52
Issue
6
fYear
2005
Firstpage
2194
Lastpage
2199
Abstract
Power diodes may undergo destructive failures when they are struck by high-energy particles during the off state (high reverse-bias voltage). This paper describes the failure mechanism using a coupled electro-thermal model. The specific case of a 3500-V diode is considered and it is shown that the temperatures reached when high voltages are applied are sufficient to cause damage to the constituent materials of the diode. The voltages at which failure occurs (e.g., 2700 V for a 17-MeV carbon ion) are consistent with previously reported data. The simulation results indicate that the catastrophic failures result from local heating caused by avalanche multiplication of ion-generated carriers.
Keywords
ion beam effects; power MOSFET; power semiconductor diodes; semiconductor device breakdown; semiconductor process modelling; avalanche multiplication; carbon ion; catastrophic failures; constituent materials; coupled electrothermal model; destructive failures; high reverse-bias voltage; high-energy particles; ion-generated carriers; local heating; power MOSFET; power diodes; Bipolar transistors; Diodes; Discrete event simulation; Electric breakdown; Electrothermal effects; Failure analysis; Heating; MOSFETs; Temperature; Voltage; Avalanche multiplication; coupled electro-thermal simulations; single event burnout (SEB);
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2005.860691
Filename
1589182
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