• DocumentCode
    818379
  • Title

    Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM

  • Author

    Ikeda, Naomi ; Kuboyama, Satoshi ; Matsuda, Sumio ; Handa, Takanobu

  • Author_Institution
    Japan Aerosp. Exploration Agency, Ibaraki, Japan
  • Volume
    52
  • Issue
    6
  • fYear
    2005
  • Firstpage
    2200
  • Lastpage
    2204
  • Abstract
    Angular dependence of proton-induced Multiple-Bit Upsets (MBUs) in a synchronous SRAM is reported. Experiments showed that the cross section of MBU depended on proton energy, incident direction, and physical arrangement of sensitive transistors in adjacent cells. Also analysis clarified that there was a special condition which MBU could be caused by a mechanism of Single-Event Upsets (SEUs), not by that of MBUs.
  • Keywords
    CMOS integrated circuits; SRAM chips; proton effects; CMOS; angular irradiation; proton energy; proton-induced multiple-bit upsets; sensitive transistors; single-event upsets; synchronous SRAM; Anisotropic magnetoresistance; CMOS technology; Logic testing; Protons; Random access memory; Satellites; Silicon on insulator technology; Single event transient; Single event upset; Space vehicles; Angular irradiation; GEANT4; Multiple-Bit Upset (MBU); SRAM; Single-Event Upset (SEU); proton;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.860692
  • Filename
    1589183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=818379