Title :
Analysis of angular dependence of proton-induced multiple-bit upsets in a synchronous SRAM
Author :
Ikeda, Naomi ; Kuboyama, Satoshi ; Matsuda, Sumio ; Handa, Takanobu
Author_Institution :
Japan Aerosp. Exploration Agency, Ibaraki, Japan
Abstract :
Angular dependence of proton-induced Multiple-Bit Upsets (MBUs) in a synchronous SRAM is reported. Experiments showed that the cross section of MBU depended on proton energy, incident direction, and physical arrangement of sensitive transistors in adjacent cells. Also analysis clarified that there was a special condition which MBU could be caused by a mechanism of Single-Event Upsets (SEUs), not by that of MBUs.
Keywords :
CMOS integrated circuits; SRAM chips; proton effects; CMOS; angular irradiation; proton energy; proton-induced multiple-bit upsets; sensitive transistors; single-event upsets; synchronous SRAM; Anisotropic magnetoresistance; CMOS technology; Logic testing; Protons; Random access memory; Satellites; Silicon on insulator technology; Single event transient; Single event upset; Space vehicles; Angular irradiation; GEANT4; Multiple-Bit Upset (MBU); SRAM; Single-Event Upset (SEU); proton;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860692
