DocumentCode :
818438
Title :
Sources of transconductance collapse in III-V nitrides - consequences of velocity-field relations and source/gate design
Author :
Wu, Yuh-Renn ; Singh, Madhusudan ; Singh, Jasprit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
52
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
1048
Lastpage :
1054
Abstract :
Experimental results from submicrometer devices in III-V nitride devices often exhibit a significant decrease in the transconductance when gate bias is increased. This creates new challenges for circuit design in III-V nitride technology. In this paper, we discuss possible sources of this collapse from a theoretical and computational standpoint. We find that polar optical phonon emission related velocity-field nonlinearities in 5-40 kV/cm region are the primary reason for the decrease in the transconductance. We also discuss possible solutions to this problem and examine the practicality of each solution. Shorter S/G spacing and higher doping in the source gate region are predicted to remove much of the transconductance collapse.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; Al0.35Ga0.65N-GaN; HEMT; HFET; III-V nitrides; circuit design; gate bias; heterojunction field-effect transistor; polar optical phonon emission; source/gate design; submicrometer devices; transconductance collapse; velocity-field relations; Circuit synthesis; Doping; Gallium nitride; HEMTs; Immune system; Microwave devices; Phonons; Scattering; Stimulated emission; Transconductance; GaN; HEMT; III–V nitrides; nonlinearity; transconductance collapse; velocity-field relations;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2005.848084
Filename :
1433094
Link To Document :
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