Visualizing the doping profile of a silicon germanium HBT with polysilicon emitter using electron holography

Author

Tilke, Armin T. ; Lenk, Andreas ; Mühle, Uwe ; Wagner, Cajetan ; Dahl, Claus ; Lichte, Hannes

Author_Institution

Infineon Technol., Hopewell Junction, NY, USA

Volume

52

Issue

6

fYear

2005

fDate

6/1/2005 12:00:00 AM

Firstpage

1067

Lastpage

1071

Abstract

Modern bipolar transistors use polysilicon emitters and an epitaxial grown silicon germanium (SiGe) base. For device optimization, both the SiGe base and the region of the diffused emitter is of special interest. In this paper, electron holography is applied to visualize and directly measure the two-dimensional distribution of the local potential in a high-performance SiGe heterojunction bipolar transistor. Special emphasis is put on investigating the region of the emitter diffused into the epitaxially grown base layer. In addition, we investigate the self-aligned base-link construction. We compare electron holographic measurements of the whole transistor to secondary ion mass spectrometric (SIMS) data and discuss the results.

Keywords

Ge-Si alloys; doping profiles; electron holography; heterojunction bipolar transistors; secondary ion mass spectra; semiconductor epitaxial layers; 2D local potential distribution; BiCMOS; SiGe; SiGe HBT; device optimization; diffused emitter; doping profile visualization; electron holography; epitaxially grown base layer; heterojunction bipolar transistor; polysilicon emitter; secondary ion mass spectrometry; self-aligned base-link construction; Bipolar transistors; Doping profiles; Electron emission; Germanium silicon alloys; Heterojunction bipolar transistors; Holography; MOSFETs; Mass spectroscopy; Silicon germanium; Visualization; BiCMOS; bipolar; electron holography; emitter; polysilicon; silicon germanium (SiGe);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.848123

Filename

1433097