Title :
A novel current-scaling a-Si:H TFTs pixel electrode circuit for AM-OLEDs
Author :
Lin, Yen-Chung ; Shieh, Han-Ping D. ; Kanicki, Jerzy
Author_Institution :
Display Inst., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
Hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) pixel electrode circuit with a function of current scaling is proposed for active-matrix organic light-emitting displays (AM-OLEDs). In contrast to the conventional current mirror pixel electrode circuit, in this circuit a high data-to-organic light-emitting device (OLED) current ratio can be achieved, without increasing the a-Si:H TFT size, by using a cascade structure of storage capacitors. Moreover, the proposed circuit can compensate for the variations of TFT threshold voltage. Simulation results, based on a-Si:H TFT and OLED experimental data, showed that a data-to-OLED current ratio larger than 10 and a fast pixel programming time can be accomplished with the proposed circuit.
Keywords :
amorphous semiconductors; organic light emitting diodes; thin film transistors; AMOLED; Si:H; TFT; amorphous silicon thin-film transistor; cascaded storage capacitors; current driving; current scaling; pixel electrode circuit; pixel programming; polymer light-emitting device; threshold voltage; Active matrix technology; Amorphous silicon; Capacitors; Circuits; Electrodes; Flat panel displays; Mirrors; Organic light emitting diodes; Thin film transistors; Threshold voltage; Active-matrix; active-matrix organic light-emitting displays (AM-OLEDs); current driving; current scaling; light-emitting diode (LED); organic light-emitting displays (OLED); polymer light-emitting device (PLED); thin-film transistor;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.848119
