Omnidirectional reflective contacts for light-emitting diodes

Author

Gessmann, T. ; Schubert, E.F. ; Graff, J.W. ; Streubel, K. ; Karnutsch, C.

Author_Institution

Dept. of Electr., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

24

Issue

11

fYear

2003

Firstpage

683

Lastpage

685

Abstract

An electrically conductive omnidirectional reflector (ODR) is demonstrated in an AlGaInP light-emitting diode (LED). The ODR serves as p-type contact and comprises the semiconductor, a metal layer and an intermediate low-refractive index dielectric layer. The dielectric layer is perforated by an array of AuZn microcontacts thus enabling electrical conductivity. It is shown that the ODR significantly increases light extraction from an AlGaInP LED as compared to a reference LED employing a distributed Bragg reflector (DBR). External quantum efficiencies of 18% and 11% are obtained for the ODR- and the DBR-LED, respectively.

Keywords

III-V semiconductors; aluminium compounds; electrical conductivity; gallium compounds; indium compounds; light emitting diodes; mirrors; ohmic contacts; reflectivity; 11 percent; 18 percent; AlGaInP; AlGaInP light-emitting diode; AuZn; AuZn microcontact array; LED; electrical conductivity; electrically conductive omnidirectional reflector; external quantum efficiencies; intermediate low-refractive index dielectric layer; light extraction; omnidirectional reflective contacts; p-type ohmic contact; reflectivity; Conductivity; Contacts; Dielectrics; Distributed Bragg reflectors; Gallium arsenide; Light emitting diodes; Optical reflection; Reflectivity; Semiconductor materials; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.817386

Filename

1242327