Title :
Hall mobility in hafnium oxide based MOSFETs: charge effects
Author :
Ragnarsson, L-Å ; Bojarczuk, N.A. ; Karasinski, J. ; Guha, S.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The Hall effect is used to measure the electron mobility in HfO/sub 2/ based n-channel field effect transistors with poly-Si gates. Large deviations between measured Hall and drift mobilities are explained by the presence of high concentrations of nonfixed charge (up to 4/spl times/10/sup 12/ cm/sup -2/). Simulated mobility curves show that the observed concentrations of fixed and nonfixed charge can estimate the measured mobility significantly better than if only the fixed charge concentration is used.
Keywords :
Hall mobility; MOSFET; dielectric thin films; electron mobility; hafnium compounds; interface states; semiconductor device measurement; Hall mobility; HfO/sub 2/ based n-channel field effect transistors; HfO/sub 2/-Si; MOSFETs; drift mobilities; electron mobility; fixed charge concentrations; gate dielectric; high permittivity; interfacial traps; nonfixed charge concentrations; poly-Si gates; simulated mobility curves; Charge measurement; Current measurement; Dielectric measurements; Dielectric substrates; Electrical resistance measurement; Hafnium oxide; Hall effect; MOSFETs; Magnetic field measurement; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.818817
