Room Temperature Lasing in 1-μm Microdisk Quantum Dot Lasers

Author

Kryzhanovskaya, Natalia V. ; Zhukov, Alexey E. ; Maximov, Mikhail V. ; Moiseev, Eduard I. ; Shostak, Ivan I. ; Nadtochiy, Alexey M. ; Kudashova, Yulia V. ; Lipovskii, Andrey A. ; Kulagina, Marina M. ; Troshkov, Sergey I.

Author_Institution

St. Petersburg Acad. Univ., St. Petersburg, Russia

Volume

21

Issue

6

fYear

2015

fDate

Nov.-Dec. 2015

Firstpage

1

Lastpage

5

Abstract

Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 μm were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-μm wavelength range (ground-state transition) in microlasers as small as 1 μm in diameter. The microlasers demonstrate narrow linewidths (40-60 pm), low thermal impedance (85°C/mW), and low threshold powers (50-100 μW).

Keywords

etching; gallium arsenide; indium compounds; microdisc lasers; optical fabrication; optical pumping; photolithography; quantum dot lasers; InAs-InGaAs; ground-state transition; linewidths; microdisk quantum dot lasers; optical pumping; power 50 muW to 100 muW; room temperature lasing; size 1 mum to 6 mum; standard photolithography; temperature 293 K to 298 K; thermal impedance; threshold powers; two-step wet etching; wavelength 1.29 mum to 1.32 mum; Optical pumping; Optical resonators; Optical scattering; Pump lasers; Quantum dot lasers; Microdisk; quantum dots; whispering gallery modes;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2015.2439156

Filename

7115038