Title :
Neutron-induced SEU in SRAMs: Simulations with n-Si and n-O interactions
Author :
Lambert, D. ; Baggio, J. ; Hubert, G. ; Ferlet-Cavrois, V. ; Flament, O. ; Saigné, F. ; Wrobel, F. ; Duarte, H. ; Boch, J. ; Sagnes, B. ; Buard, N. ; Carriére, T.
Author_Institution :
CEA/DAM, Bruyeres-le-Chatel, France
Abstract :
This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed with both experiments and Monte Carlo simulations. In particular, simulations include the nuclear interactions of neutrons with both silicon and oxygen nuclei (n-Si and n-O), in order to investigate the influence of isolation upper layers on the device sensitivity. The device cross-sections are analyzed for mono-energetic neutron irradiations and discussed in terms of nuclear interaction type (n-Si and n-O) and distribution of the secondary ion recoils. We also investigate the dimensions of the interaction volume around the sensitive cell as a function of the device architecture.
Keywords :
Monte Carlo methods; SRAM chips; neutron effects; sensitivity analysis; silicon-on-insulator; 14 to 500 MeV; Monte Carlo simulations; SOI; bulk SRAMs; device cross-sections; isolation upper layers; monoenergetic neutron irradiations; n-O interactions; n-Si interactions; neutron-induced SEU; nuclear interactions; nuclear secondary ion recoils; oxygen nuclei; sensitive cell; silicon nuclei; soft error rate; technology sensitivity; Aerospace electronics; Collaboration; Error analysis; Integrated circuit reliability; Isolation technology; Neutrons; Random access memory; Road transportation; Silicon on insulator technology; Single event upset; Bulk technologies; Monte Carlo methods; SOI technologies; neutron effects; single-event upset (SEU); soft error rate (SER);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860753
