DocumentCode :
818645
Title :
Comprehensive study of drain breakdown in MOSFETs
Author :
Li, Junjun ; Li, Hongmei ; Barnes, Ryan ; Rosenbaum, Elyse
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA
Volume :
52
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
1180
Lastpage :
1186
Abstract :
MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB,CGD,Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device models; MOSFET; avalanche breakdown; breakdown voltage; drain breakdown; electrostatic discharge; overvoltage protection; semi-empirical equation; semiconductor device modeling; substrate resistance; trigger voltage; Breakdown voltage; Circuit testing; Electric breakdown; Electrostatic discharge; Fingers; MOSFETs; Protection; Silicides; Voltage control; Voltage measurement; Avalanche breakdown; MOSFETs; electrostatic discharge; overvoltage protection; semiconductor device modeling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2005.848858
Filename :
1433112
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=818645
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