High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

Author

Luo, Yanbin ; Zhang, Jianhui ; Alexandrov, Petre ; Fursin, Leonid ; Zhao, Jian H. ; Burke, Terry

Author_Institution

ECE Dept., Rutgers Univ., Piscataway, NJ, USA

Volume

24

Issue

11

fYear

2003

Firstpage

695

Lastpage

697

Abstract

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.

Keywords

current density; high-temperature electronics; ohmic contacts; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 1011 V; 25 to 200 C; 4H-SiC bipolar junction transistors; 4H-SiC power BJTs; Al-free ohmic contact; SiC; Ti-TiN; blocking voltage; collector current level; design; fabrication; high dc current gain; high voltage; specific on-resistance; Breakdown voltage; Current density; Doping; Fabrication; Low voltage; Material properties; Ohmic contacts; Power transistors; Silicon carbide; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.819271

Filename

1242331