Title :
High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base
Author :
Luo, Yanbin ; Zhang, Jianhui ; Alexandrov, Petre ; Fursin, Leonid ; Zhao, Jian H. ; Burke, Terry
Author_Institution :
ECE Dept., Rutgers Univ., Piscataway, NJ, USA
Abstract :
This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.
Keywords :
current density; high-temperature electronics; ohmic contacts; power bipolar transistors; semiconductor device breakdown; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 1011 V; 25 to 200 C; 4H-SiC bipolar junction transistors; 4H-SiC power BJTs; Al-free ohmic contact; SiC; Ti-TiN; blocking voltage; collector current level; design; fabrication; high dc current gain; high voltage; specific on-resistance; Breakdown voltage; Current density; Doping; Fabrication; Low voltage; Material properties; Ohmic contacts; Power transistors; Silicon carbide; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.819271
