DocumentCode :
818665
Title :
Total ionizing dose effects on deca-nanometer fully depleted SOI devices
Author :
Paillet, P. ; Gaillardin, M. ; Ferlet-Cavrois, V. ; Torres, A. ; Faynot, O. ; Jahan, C. ; Tosti, L. ; Cristoloveanu, S.
Author_Institution :
CEA/DIF, France
Volume :
52
Issue :
6
fYear :
2005
Firstpage :
2345
Lastpage :
2352
Abstract :
Total ionizing dose effects are investigated for the first time in deca-nanometer fully depleted (FD) silicon-on-insulator (SOI) devices. Charge trapping and the influence of device architecture are investigated in transistors with and without external body contacts. A radiation-induced high current regime is measured in floating body devices, both at high and low drain voltages. The mechanism responsible for the onset of this high current regime is investigated by 2D numerical simulations, and shown to result from the combined effect of short gate length and floating body potential in the intrinsic Si film. Transistors with a doped Si film are less sensitive to the high current regime. The use of external body contact in the device architecture completely stops the onset of high current regime, whatever the device gate length.
Keywords :
MOSFET; buried layers; dosimetry; semiconductor devices; semiconductor thin films; silicon-on-insulator; 2D numerical simulations; NMOS transistors; charge trapping; deca-nanometer fully depleted silicon-on-insulator devices; drain voltages; floating body devices; floating body potential; intrinsic Si film; radiation-induced high current regime; short gate length; total ionizing dose effects; Current measurement; Doping; Helium; Low voltage; MOSFETs; Numerical simulation; Semiconductor films; Silicon on insulator technology; Substrates; Testing; Fully depleted; NMOS transistors; silicon on insulator; total dose irradiation;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.860699
Filename :
1589206
Link To Document :
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