Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

Author

Cellere, G. ; Paccagnella, A. ; Visconti, A. ; Bonanomi, M. ; Candelori, A. ; Lora, S.

Author_Institution

Dept. of Inf. Eng., Padova Univ., Italy

Volume

52

Issue

6

fYear

2005

Firstpage

2372

Lastpage

2377

Abstract

We irradiated programmed Floating Gate (FG) memory arrays with different radiation sources, including 10 keV X-rays, ⁶⁰Co γ-rays, and 27 MeV protons. After irradiation, FGs experience a net charge loss which can degrade the stored information in terms of MOSFET threshold voltage. The charge loss is the result of two different phenomena: charge generation/recombination in the oxides and photoemission from the FG. The threshold voltage shift in irradiated devices depends on the radiation source: strong dose enhancement phenomena were found after X-ray irradiation, whereas proton results closely follow γ-ray results.

Keywords

MOSFET; X-ray effects; gamma-ray effects; photoemission; programmable logic arrays; proton effects; semiconductor storage; 10 keV; 27 MeV; ⁶⁰Co γ-ray irradiation; MOSFET threshold voltage; X-ray irradiation; charge generation; charge loss; charge recombination; floating gate memory arrays; ionizing dose sources; photoemission; programmed floating gate cells; proton irradiation; radiation sources; threshold voltage shift; Character generation; Charge carrier processes; Electrons; Ionizing radiation; MOSFET circuits; Nonvolatile memory; Protons; Spontaneous emission; Threshold voltage; X-rays; Floating gate (FG) memory arrays; X-rays; irradiation; protons; total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860681

Filename

1589210