• DocumentCode
    818724
  • Title

    Corrections to "An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"

  • Author

    Kangguo Cheng ; Lyding, Joseph W.

  • Author_Institution
    University of Illinois
  • Volume
    24
  • Issue
    11
  • fYear
    2003
  • Firstpage
    710
  • Lastpage
    710
  • Keywords
    Analytical models; Annealing; Curve fitting; Deuterium; Hydrogen; MOSFETs; Metallization; Passivation; Research and development; Transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.820017
  • Filename
    1242336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=818724