Title :
Corrections to "An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps"
Author :
Kangguo Cheng ; Lyding, Joseph W.
Author_Institution :
University of Illinois
Keywords :
Analytical models; Annealing; Curve fitting; Deuterium; Hydrogen; MOSFETs; Metallization; Passivation; Research and development; Transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.820017
