DocumentCode :
818757
Title :
Reverse active mode current characteristics of SiGe HBTs
Author :
Rieh, Jae-Sung ; Cai, Jin ; Ning, Tak ; Stricker, Andreas ; Freeman, Greg
Author_Institution :
Dept. of Electron. Eng., Korea Univ., Seoul, South Korea
Volume :
52
Issue :
6
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
1219
Lastpage :
1222
Abstract :
The current characteristics of SiGe heterojunction bipolar transistors (HBTs) operating in the reverse active mode are investigated. It is experimentally shown that the IC is identical for the reverse and the forward modes for arbitrary doping and Ge profiles across the base to first order. In contrast, the impact of VBE and VCB modulation on IC is opposite for the two modes, leading to a smaller Early voltage but more ideal collector current for the reverse mode.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; Early voltage; HBT; SiGe; arbitrary doping; collector current; heterojunction bipolar transistors; reverse active mode current characteristics; Aluminum gallium nitride; Carrier confinement; Diode lasers; Electric resistance; Gallium nitride; Germanium silicon alloys; Heterojunction bipolar transistors; Light emitting diodes; Resistance heating; Silicon germanium; Current; heterojunction bipolar transistors (HBTs);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2005.848869
Filename :
1433120
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=818757
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