Title :
Total dose radiation response of CMOS compatible SOI MESFETs
Author :
Spann, John ; Kushner, Vadim ; Thornton, Trevor J. ; Yang, Jinman ; Balijepalli, Asha ; Barnaby, Hugh J. ; Chen, Xiao Jie ; Alexander, David ; Kemp, William T. ; Sampson, Steve J. ; Wood, Michael E.
Author_Institution :
Electr. Eng. Dept., Arizona State Univ., Tempe, AZ, USA
Abstract :
Metal semiconductor field effect transistors (MESFETs) have been fabricated using a silicon-on-insulator (SOI) CMOS process. The MESFETs make use of a TiSi2 Schottky gate and display good depletion mode characteristics with a threshold voltage of -0.5 V. The drain current can also be controlled by a voltage applied to the substrate, which then behaves as a MOS back gate. The transistors have been irradiated with 50 keV X-rays to a total ionizing dose in excess of 1 Mrad(Si). After irradiation the threshold voltage of both the top Schottky gate and the back MOS gate shift to more negative values. The shift in threshold is attributed to radiation induced fixed oxide charge at the interface between the SOI channel and the buried oxide.
Keywords :
CMOS integrated circuits; MESFET integrated circuits; X-ray effects; radiation hardening (electronics); silicon-on-insulator; titanium compounds; -0.5 V; 50 keV; CMOS compatible SOI MESFET; MOS gate shift; Si; TiSi2; TiSi2 Schottky gate; X-ray irradiation; depletion mode characteristics; drain current; threshold voltage; total dose radiation response; CMOS process; CMOS technology; FETs; Gallium arsenide; MESFETs; Silicon on insulator technology; Space technology; Substrates; Threshold voltage; X-rays; MESFETs; X-ray effects; silicon-on-insulator technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860701
