Title :
Radiation-induced edge effects in deep submicron CMOS transistors
Author :
Faccio, Federico ; Cervelli, Giovanni
Author_Institution :
Phys. Dept., CERN, Geneva, Switzerland
Abstract :
The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).
Keywords :
CMOS integrated circuits; leakage currents; radiation hardening (electronics); RINCE; charge trapping; commercial CMOS technology; deep submicron CMOS transistors; isolation test structures; leakage current; narrow channel transistors; radiation induced narrow channel effect; radiation tolerance; thin gate oxide; threshold voltage shift; total ionizing dose response; Application specific integrated circuits; CMOS technology; Integrated circuit technology; Isolation technology; Large Hadron Collider; Lead compounds; Leakage current; Performance evaluation; Radiation effects; Testing; Deep submicron CMOS transistors; RINCE; narrow channel effect; radiation effects;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.860698
