Radiation-induced edge effects in deep submicron CMOS transistors

Author

Faccio, Federico ; Cervelli, Giovanni

Author_Institution

Phys. Dept., CERN, Geneva, Switzerland

Volume

52

Issue

6

fYear

2005

Firstpage

2413

Lastpage

2420

Abstract

The study of the TID response of transistors and isolation test structures in a 130 nm commercial CMOS technology has demonstrated its increased radiation tolerance with respect to older technology nodes. While the thin gate oxide of the transistors is extremely tolerant to dose, charge trapping at the edge of the transistor still leads to leakage currents and, for the narrow channel transistors, to significant threshold voltage shift-an effect that we call Radiation Induced Narrow Channel Effect (RINCE).

Keywords

CMOS integrated circuits; leakage currents; radiation hardening (electronics); RINCE; charge trapping; commercial CMOS technology; deep submicron CMOS transistors; isolation test structures; leakage current; narrow channel transistors; radiation induced narrow channel effect; radiation tolerance; thin gate oxide; threshold voltage shift; total ionizing dose response; Application specific integrated circuits; CMOS technology; Integrated circuit technology; Isolation technology; Large Hadron Collider; Lead compounds; Leakage current; Performance evaluation; Radiation effects; Testing; Deep submicron CMOS transistors; RINCE; narrow channel effect; radiation effects;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860698

Filename

1589217