DocumentCode
818890
Title
Radiation-induced multi-bit upsets in SRAM-based FPGAs
Author
Quinn, Heather ; Graham, Paul ; Krone, Jim ; Caffrey, Michael ; Rezgui, Sana
Author_Institution
Space Data Syst., Los Alamos Nat. Lab., NM, USA
Volume
52
Issue
6
fYear
2005
Firstpage
2455
Lastpage
2461
Abstract
This paper provides a methodology for estimating the proton and heavy ion static saturation cross-sections for multi-bit upsets (MBUs) in Xilinx field-programmable gate arrays and describes a methodology for determining MBUs´ effects on triple-modular redundancy protected circuits. Experimental results are provided.
Keywords
SRAM chips; field programmable gate arrays; proton effects; SRAM-based FPGA; Xilinx field-programmable gate arrays; heavy ion static saturation cross-sections; proton ion static saturation cross-sections; radiation-induced multibit upsets; triple-modular redundancy protected circuits; CMOS technology; Circuits; Costs; Field programmable gate arrays; Frequency; Hardware; Laboratories; Protection; Protons; Testing; Heavy ions; field programmable gate arrays; proton radiation effects;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2005.860742
Filename
1589223
Link To Document