A new total-dose-induced parasitic effect in enclosed-geometry transistors

We present data showing a new total-dose-induced parasitic effect in enclosed-geometry transistors. A model for this new effect shows that the normal radiation-induced edge leakage current becomes gate controlled in ringed-source transistors. Small width-to-length (W/L) N-channel field-effect transistors (NFETs), often used in analog designs, show an additional drain current and transconductance, because the gate-controlled leakage current approaches the magnitude of the ideal channel current.