High-gain quantum-dot semiconductor optical amplifier for 1300 nm

Author

Bakonyi, Zoltan ; Su, Hui ; Onishchukov, George ; Lester, Luke F. ; Gray, Allen L. ; Newell, Timothy C. ; Tünnermann, Andreas

Author_Institution

Inst. of Appl. Phys., Friedrich-Schiller Univ. of Jena, Germany

Volume

39

Issue

11

fYear

2003

Firstpage

1409

Lastpage

1414

Abstract

Using an AlGaAs-GaAs waveguide structure with a six-stack InAs-InGaAs "dots-in-a-well" (DWELL) gain region having an aggregate dot density of approximately 8×10¹¹ cm^-2, an optical gain of 18 dB at 1300 nm has been obtained in a 2.4-mm-long amplifier at 100-mA pump current. The optical bandwidth is 50 nm, and the output saturation power is 9 dBm. The dependence of the amplifier parameters on the pump current and the gain recovery dynamics has also been studied.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; optical saturation; quantum dot lasers; semiconductor optical amplifiers; waveguide lasers; 100 mA; 1300 nm; 18 dB; 2.4 mm; AlGaAs-GaAs waveguide structure; DWELL; InAs-InGaAs; aggregate dot density; gain recovery dynamics; high-gain quantum-dot semiconductor optical amplifier; optical bandwidth; optical gain; output saturation power; pump current; six-stack InAs-InGaAs dots-in-a-well gain region; Aggregates; Gain; Optical amplifiers; Optical pumping; Optical saturation; Optical waveguides; Quantum dots; Semiconductor optical amplifiers; Semiconductor waveguides; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2003.818306

Filename

1242359