DocumentCode :
819068
Title :
Semiconductor materials and detectors for future very high luminosity colliders
Author :
Candelori, Andrea
Author_Institution :
Dipt. di Fisica, Padova Univ., Italy
Volume :
52
Issue :
6
fYear :
2005
Firstpage :
2554
Lastpage :
2561
Abstract :
Recent results from the CERN RD50 Collaboration for the development of radiation-hard detectors for the LHC upgrade (Super-LHC) and in general for very high luminosity colliders are reviewed, summarized and discussed. Particularly, the attention is focused on emerging technologies (Czochralski and Magnetic Czochralski silicon, thinned detectors, highly doped thin epitaxial layer on Czochralski substrate, pre-irradiated silicon, p-type substrate devices) and new detector structures (3D, 3D-STC, Semi-3D, and Stripixel).
Keywords :
neutron effects; position sensitive particle detectors; proton effects; semiconductor diodes; semiconductor materials; silicon radiation detectors; CERN RD5O collaboration; LHC upgrade; doped thin epitaxial layers; emerging technologies; luminosity colliders; magnetic Czochralski silicon substrate; neutron radiation effects; p-type substrate devices; pre-irradiated silicon; proton radiation effects; radiation detectors; radiation-hard detectors; semiconductor diodes; semiconductor materials; thinned detectors; Collaboration; Collaborative work; Large Hadron Collider; Leakage current; Radiation detectors; Semiconductor materials; Semiconductor radiation detectors; Silicon radiation detectors; Substrates; Voltage; Accelerators; neutron radiation effects; proton radiation effects; radiation detectors; semiconductor diodes;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2005.860703
Filename :
1589238
Link To Document :
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