Millimeter-Wave In Situ Tuner: An Efficient Solution to Extract the Noise Parameters of SiGe HBTs in the Whole 130–170 GHz Range

Author

Deng, Meixia ; Poulain, Laurent ; Gloria, Daniel ; Quemerais, Thomas ; Chevalier, P. ; Lepilliet, Sylvie ; Danneville, Frangois ; Dambrine, Gilles

Author_Institution

IEMN, Villeneuve-d´Ascq, France

Volume

24

Issue

9

fYear

2014

fDate

Sept. 2014

Firstpage

649

Lastpage

651

Abstract

SiGe HBT noise parameters ( NF_min, R_n and Γ_opt) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on this system were performed for each tuner impedance state, from which are extracted the transistor noise parameters in the complete D-band.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device measurement; semiconductor device noise; semiconductor device testing; D-band on-chip source-pull system; HBT; SiGe; frequency 130 GHz to 170 GHz; impedance tuner; millimeter-wave in situ tuner; on-wafer noise power measurement; transistor noise parameter extraction; transistor under test; Frequency measurement; Heterojunction bipolar transistors; Noise; Noise measurement; Silicon germanium; Tuners; $D$-band; SiGe heterojunction bipolar transistors; in situ tuner; millimeter wave; noise characterization; noise parameters extraction; noise power measurement;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2331762

Filename

6849508