Local and pseudo SELs observed in digital LSIs and their implication to SEL test method

Author

Shindou, H. ; Kuboyama, S. ; Hirao, T. ; Matsuda, S.

Author_Institution

Japan Aerosp. Exploration Agency, Ibaraki, Japan

Volume

52

Issue

6

fYear

2005

Firstpage

2638

Lastpage

2641

Abstract

The characteristic nondestructive single-event latchup (SEL) phenomena, "local" and "pseudo" SELs, were identified in complex digital Large Scale Integrations (LSIs) by using a photo-emission microscope. Usually, SELs are detected as an abrupt increase of power supply current. However, it was experimentally demonstrated that the simple method could not give sufficient information to determine if it is a destructive or a nondestructive phenomenon. If the observed SELs can be confirmed as a nondestructive phenomenon with a certain confidence level, a simple circumvention technique can be effectively employed and the chance to utilize attractive commercial devices will be greatly enhanced. The SEL test method to identify this type of LSI was discussed and a new procedure was proposed.

Keywords

integrated circuit testing; large scale integration; nondestructive testing; photoelectron microscopy; system-on-chip; digital LSI; local single-event latchup; nondestructive single-event latchup phenomena; photoemission microscope; power supply current; pseudo single-event latchup; single-event latchup test method; system-on-a-chip; CMOS technology; Current supplies; Electronic equipment; Large scale integration; MOS devices; Microscopy; Nondestructive testing; Power supplies; System-on-a-chip; Voltage; Non-destructive; photo-emission microscope; single-event latchup (SEL); system-on-a-chip (SoC);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.861081

Filename

1589250