• DocumentCode
    819309
  • Title

    Proton damage effects in high performance P-channel CCDs

  • Author

    Spratt, James P. ; Conger, Chris ; Bredthauer, Richard ; Byers, Wheaton ; Groulx, Robert ; Leadon, Roland ; Clark, Henry

  • Author_Institution
    Full Circle Res. Inc., Redondo Beach, CA, USA
  • Volume
    52
  • Issue
    6
  • fYear
    2005
  • Firstpage
    2695
  • Lastpage
    2702
  • Abstract
    P-channel CCDs with pre-rad imaging characteristics comparable to the best N-channel CCDs have been fabricated and tested. These devices have been subjected to proton damage and display the superior hardness predicted for them.
  • Keywords
    charge exchange; charge-coupled devices; proton effects; N-channel charge-coupled devices; P-channel charge-coupled devices; charge transfer efficiency; displacement damage hardened imagers; proton damage effects; superior hardness; Charge coupled devices; Charge transfer; Clocks; Delay effects; Displays; Image analysis; Life testing; Protons; Silicon; Temperature; Charge transfer efficiency; P-channel CCDs; displacement damage hardened imagers;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2005.860738
  • Filename
    1589259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=819309