DocumentCode :
819418
Title :
A new magnetic sensor using separated drift field
Author :
Lee, Seung-Ki ; Oh, Kwang-Hoon ; Kang, Uk-Song ; Han, Min-Koo
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume :
28
Issue :
5
fYear :
1992
fDate :
9/1/1992 12:00:00 AM
Firstpage :
2193
Lastpage :
2195
Abstract :
A novel magnetotransistor using a separated drift field has been designed and fabricated. The measured relative sensitivity of the magnetotransistor agrees well with the analytical value based on the emitter injection modulation model. The separated drift field, which is independent of the carrier injection, can maximize the effect of emitter injection modulation. In the saturation mode, the relative sensitivity is greatly increased by the drift of electrons due to the lateral field in the emitter
Keywords :
bipolar transistors; electric sensing devices; magnetic field measurement; semiconductor device models; emitter injection modulation model; lateral field; magnetic sensor; magnetotransistor; relative sensitivity; saturation mode; separated drift field; Bipolar transistors; Electron emission; Magnetic analysis; Magnetic field measurement; Magnetic fields; Magnetic modulators; Magnetic sensors; Magnetic separation; Saturation magnetization; Voltage;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.179440
Filename :
179440
Link To Document :
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