DocumentCode
819418
Title
A new magnetic sensor using separated drift field
Author
Lee, Seung-Ki ; Oh, Kwang-Hoon ; Kang, Uk-Song ; Han, Min-Koo
Author_Institution
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Volume
28
Issue
5
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2193
Lastpage
2195
Abstract
A novel magnetotransistor using a separated drift field has been designed and fabricated. The measured relative sensitivity of the magnetotransistor agrees well with the analytical value based on the emitter injection modulation model. The separated drift field, which is independent of the carrier injection, can maximize the effect of emitter injection modulation. In the saturation mode, the relative sensitivity is greatly increased by the drift of electrons due to the lateral field in the emitter
Keywords
bipolar transistors; electric sensing devices; magnetic field measurement; semiconductor device models; emitter injection modulation model; lateral field; magnetic sensor; magnetotransistor; relative sensitivity; saturation mode; separated drift field; Bipolar transistors; Electron emission; Magnetic analysis; Magnetic field measurement; Magnetic fields; Magnetic modulators; Magnetic sensors; Magnetic separation; Saturation magnetization; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.179440
Filename
179440
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