DocumentCode :
819440
Title :
Lateral mode discrimination in AlGaInP selectively buried ridge waveguide lasers
Author :
Bour, D.P. ; Evans, G.A.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Volume :
139
Issue :
1
fYear :
1992
fDate :
2/1/1992 12:00:00 AM
Firstpage :
71
Lastpage :
74
Abstract :
The guiding mechanism of (AlxGa1-x)0.5 In0.5P visible lasers is analysed using a simple effective index approach and is found to be analogous to that of AlGaAs channelled substrate planar lasers. Outside the ridge, the bound mode is leaky, resulting in a real lateral index guide. Furthermore, the loss outside the ridge provides good discrimination against oscillation of higher order modes. The best ridge widths, based on the tradeoff of low loss in the fundamental mode along with high lateral mode discrimination, are in the range 5-7 μm
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser modes; optical waveguides; semiconductor junction lasers; (AlxGa1-x)0.5In0.5P visible lasers; AlGaInP selectively buried ridge waveguide lasers; III-V semiconductor; bound mode; fundamental mode; guiding mechanism; higher order modes; lateral mode discrimination; loss; oscillation; real lateral index guide; ridge widths; simple effective index approach;
fLanguage :
English
Journal_Title :
Optoelectronics, IEE Proceedings J
Publisher :
iet
ISSN :
0267-3932
Type :
jour
Filename :
124256
Link To Document :
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