Title :
GaAlAs/GaAs planar photoconductors and MSM photodetectors monolithically integrated with HIGFETs: application for optical clock distribution
Author :
Aboudou, A. ; Vilcot, J.P. ; Danneville, F. ; Decoster, D. ; Delhaye, E. ; Boissenot, P. ; Varin, C. ; Deschamps, F. ; Lecuru, I.
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille-Flandres-Artois, Villeneuve d´´Ascq, France
fDate :
2/1/1992 12:00:00 AM
Abstract :
III-V integrated circuits associating on one hand a photoconductive detector and on the other hand an MSM photodetector with HIGFETs for optical clock distribution are presented. First, static and dynamic properties of these planar photodetectors are studied, taking into account the main characteristics of their structures (ion implantation for photoconductive detectors and AlxGa1-x As upper layer with x=0.45 for MSM photodetectors). Secondly, their integration with a III-V digital IC is reported. This IC includes a divider by two and its operation has been investigated up to 1.2 GHz
Keywords :
III-V semiconductors; aluminium compounds; digital integrated circuits; gallium arsenide; insulated gate field effect transistors; integrated optoelectronics; metal-semiconductor-metal structures; photoconducting devices; photodetectors; 1.2 GHz; GaAlAs-GaAs planar photoconductors; HIGFETs; III-V integrated circuits; III-V semiconductors; MSM photodetector; digital IC; dynamic properties; heterostructure insulated gate field transistor; ion implantation; monolithic integration; optical clock distribution; photoconductive detector; planar photodetectors;
Journal_Title :
Optoelectronics, IEE Proceedings J
