Extraction of Substrate Resistance in Bulk FinFETs Through RF Modeling

A new method to extract substrate resistance (R_sub) for small-sized nano-scale metal oxide semiconductor field effect transistors (MOSFETs) including bulk FinFETs is proposed and compared with conventional method. The R_sub´s extracted from small-size MOSFETs by using the proposed method are shown to have frequency independent characteristics, unlike those from the conventional method. Proposed equivalent circuit explains well the R_sub behavior with body width. The proposed model showed very good agreement (error in Y₂₂~3%) with three-dimensional device simulation