On the RF Extrinsic Resistance Extraction for Partially-Depleted SOI MOSFETs

Author

Wang, Sheng-Chun ; Su, Pin ; Chen, Kun-Ming ; Lin, Chien-Ting ; Liang, Victor ; Huang, Guo-Wei

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu

Volume

17

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

364

Lastpage

366

Abstract

We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs

Keywords

MOSFET; electric resistance; equivalent circuits; semiconductor device models; silicon-on-insulator; RF extrinsic resistance extraction; equivalent circuit; frequency dependence; metal-oxide-semiconductor field effect transistors; neutral-body coupling effect; partially-depleted SOI MOSFET; quasi-neutral body; radio frequency; silicon-on-insulator; thick buried oxide; CMOS technology; Coupling circuits; Equivalent circuits; FETs; Immune system; Integrated circuit technology; MOSFETs; Radio frequency; Semiconductor device modeling; Silicon on insulator technology; Metal-oxide-semiconductor field effect transistors (MOSFETs); radio frequency (RF); resistance extraction; silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.895713

Filename

4167934