Title :
An Integrated Patch-Clamp Amplifier in Silicon-on-Sapphire CMOS
Author :
Laiwalla, Farah ; Klemic, Kathryn G. ; Sigworth, Fred J. ; Culurciello, Eugenio
Author_Institution :
Electr. Eng., Yale Univ., New Haven, CT
Abstract :
We designed and tested an integrated patch-clamp amplifier capable of recording from pico to tens of microamperes of current. The high-dynamic range of seven decades and the picoampere sensitivity of the instrument was targeted to whole-cell patch-clamp recordings. The prototype was fabricated on a 0.5-mum silicon-on-sapphire process. The device employs an integrating headstage with a pulse frequency modulated output, ranging from 3 Hz to 10 MHz. A digital interface produces a 16-bit output conversion of the input currents. We report on electronic characterization of the fabricated device, dynamic performance, and examples of measurements on biological cells for patch-clamp applications. The device will be used in an advanced planar high-throughput patch-clamp screening system for testing medicines
Keywords :
CMOS integrated circuits; amplifiers; biomedical electronics; biomedical measurement; cellular biophysics; sapphire; silicon-on-insulator; 16 bit; 3 to 10 MHz; Si-Al2O3; advanced planar high-throughput patch-clamp screening system; biological cells; digital interface; integrated patch-clamp amplifier; medicine testing; pulse frequency modulated output; silicon-on-sapphire CMOS; Biomembranes; Circuit testing; Clamps; Drugs; Instruments; Integrated circuit testing; Parasitic capacitance; Pharmaceuticals; Pulse amplifiers; Pulse modulation; Biosensor; headstage; patch clamp; potentiostat; silicon-on-insulator (SOI); silicon-on-sapphire (SOS);
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
DOI :
10.1109/TCSI.2006.884459
