Title :
10-GHz Highly Symmetrical Sub-Harmonic Gilbert Mixer Using GaInP/GaAs HBT Technology
Author :
Wu, Tzung-Han ; Meng, Chinchun
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
fDate :
5/1/2007 12:00:00 AM
Abstract :
A 10-GHz sub-harmonic Gilbert mixer is demonstrated using GaInP/GaAs hetero-junction bipolar transistor technology. The local oscillator (LO) signal time-delay path in the sub-harmonic LO stage is compensated using the fully symmetrical stacked-LO doubler; therefore, the balance of the sub-harmonic LO stage, the radio frequency to intermediate frequency isolation, and IIP2 are improved. The demonstrated 10-GHz sub-harmonic mixer achieves 10 dB conversion gain, IP1dB of -12 dBm, IIP3 of 2 dBm and IIP2 of 33 dBm
Keywords :
1/f noise; III-V semiconductors; bipolar analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; microwave mixers; oscillators; 1/f noise; 10 GHz; 10 dB; GaInP-GaAs; HBT technology; heterojunction bipolar transistor; local oscillator; micromixer; port to port isolation; sub harmonic Gilbert mixer; time delay compensated doubler; Delay effects; Gallium arsenide; Heterojunction bipolar transistors; Isolation technology; Mixers; Radio frequency; Receivers; Resistors; Substrates; Switches; 1 $/{f}$ noise; Micromixer; port-to-port isolation; sub-harmonic Gilbert mixer; time-delay-compensated doubler;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2007.895717
