DocumentCode
81981
Title
Ultra Large-Grain Poly-Si Thin-Film Transistor Using NiSi2 Seeding Si-Amplified Layer
Author
Jae Hyo Park ; Hyung Yoon Kim ; Chang Woo Byun ; Seung Ki Joo
Author_Institution
Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea
Volume
36
Issue
8
fYear
2015
fDate
Aug. 2015
Firstpage
778
Lastpage
780
Abstract
A novel technique for enlarging grains of poly-Si thin-film has been successfully demonstrated, using a 1-μm thick Si-amplified layer (SAL) and NiSi2 seeds on the top. It was applied to top-gated thin-film transistors (TFTs) and showed high electrical performance. The NiSi2 seeds induce vertical crystallization in the SAL and migrate toward the bottom, forming columnar grains. The grain size of the poly-Si thin-film increases when the NiSi2 seeds diffuse deeply into the SAL and eventually an ultralarge-grain (ULG) poly-Si thin film is formed. The SAL was removed for use in the fabrication of a top-gated TFT. The performance of the ULG poly-Si TFT was compared with that of a NiSi2 seed-induced crystallized poly-Si TFT which was fabricated without an SAL.
Keywords
crystallisation; elemental semiconductors; grain size; nickel compounds; silicon; thin film transistors; NiSi2; columnar grains; grain size; nickel silicide seeding; silicon-amplified layer; size 1 mum; thin-film transistor; top-gated TFT; ultralarge-grain poly-silicon TFT; vertical crystallization; Crystallization; Grain boundaries; Grain size; Logic gates; Silicon; Silicon carbide; Thin film transistors; NiSi2 seeds; Ultra-large-grains (ULG); poly-Si thin-film; thin-film transistor (TFT); ultra-large-grains (ULG);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2015.2438874
Filename
7115056
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