Title :
Carrier plasma shift in GaInAsP photonic crystal point defect cavity
Author :
Baba, T. ; Shiga, M. ; Inoshita, K. ; Koyama, F.
Author_Institution :
Dept. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Abstract :
A 1.43-μm-GaInAsP photonic crystal slab with a point defect cavity and line defect waveguides has been fabricated. A ∼1.5 μm-wavelength light is inserted into the waveguide and the cavity resonant spectrum observed. A 5.6 nm blue shift in the resonant peak arising from the carrier plasma effect by photopumping is also observed. These results will be applicable to all-optical switches and tunable devices.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical pumping; optical switches; optical tuning; optical waveguide filters; optical waveguides; photonic crystals; point defects; semiconductor plasma; spectral line shift; 1.43 micron; 1.5 micron; GaInAsP; GaInAsP photonic crystal slab; all-optical switches; all-optical tunable devices; carrier plasma shift; cavity resonant spectrum; line defect waveguides; photopumping; point defect cavity; resonant peak blue shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030930
