DocumentCode :
819839
Title :
High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasers
Author :
Hsueh, T.H. ; Kuo, H.-C. ; Lai, F.-I. ; Laih, L.H. ; Wang, S.C.
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
39
Issue :
21
fYear :
2003
Firstpage :
1519
Lastpage :
1521
Abstract :
The single transverse mode operation of VCSELs with low threshold current (Ith) of 1.5 mA, slope efficiencies about 0.35 W/A, high optical output power of 3.8 mW and speed performance of 10 Gbit/s is reported. The laser has continuous-wave operation and employs oxygen implantation, MOCVD regrowth and selective oxidation on semi-insulating GaAs substrate.
Keywords :
MOCVD; laser modes; oxidation; semiconductor lasers; surface emitting lasers; 1.5 mA; 10 Gbit/s; 3.8 mW; AlGaAs-GaAs; MOCVD; VCSELs; continuous-wave operation; high-speed characteristics; large-area single-transverse-mode lasers; optical output power; selective oxidation; semi-insulating GaAs substrate; slope efficiencies; speed performance; threshold current; vertical-cavity surface-emitting lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030982
Filename :
1242806
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=819839
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