1.5-μm InGaAsP-InP multigain-levered-MQW-DFB-LD with high-efficiency and large-bandwidth FM response

Author

Shim, Jong-In ; Olesen, Henning ; Yamazaki, Hiroyuki ; Yamaguchi, Masayuki ; Kitamura, Mitsuhiro

Author_Institution

Dept. of Electron. Eng., Hanyang Univ., Ansan, South Korea

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

516

Lastpage

522

Abstract

A 1.5-μm multigain-levered (MGL)-MQW-DFB-LD which utilizes a new concept of multigain-levering is proposed and realized by two-step selective MOVPE growth. The device consists of three sections with different bandgap energies. High- and flat-FM-efficiency value of 10 GHz/mA was theoretically and experimentally demonstrated up to the 2 GHz modulation frequency

Keywords

III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; gallium compounds; indium compounds; laser feedback; optical fabrication; optical modulation; quantum well lasers; vapour phase epitaxial growth; 1.5 mum; 2 GHz; InGaAsP-InP; bandgap energies; high-efficiency laser; large-bandwidth FM response; multigain-levered-MQW-DFB-LD; multigain-levering; multiquantum well distributed feedback laser; two-step selective MOVPE growth; Bandwidth; Epitaxial growth; Epitaxial layers; Frequency modulation; Frequency shift keying; Light sources; Photonic band gap; Power generation; Power system reliability; Quantum well devices;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401236

Filename

401236