Analytical Modeling of Speed Response of Heterojunction Bipolar Phototransistors

Author

Helme, John P. ; Houston, Peter A.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield

Volume

25

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

1247

Lastpage

1255

Abstract

This paper describes a new comprehensive analytical charge-control model, which includes all the significant delays associated with heterojunction bipolar phototransistors (HPTs). A minimum number of approximations and assumptions have been made throughout its development. The model is accurate and predictive and provides an excellent insight into the operation of the HPT since the equations developed are based on fundamental charge control of the device operation. Realistic switching results up to 40 Gb/s, which are applicable to optical fiber communications systems, have been obtained, which emphasize the value of the model in the device optimization process

Keywords

heterojunction bipolar transistors; semiconductor device models; HPT; charge-control model; heterojunction bipolar phototransistors; Analytical models; Capacitance; Delay; Equations; Equivalent circuits; Heterojunction bipolar transistors; Optical fiber communication; Phototransistors; Predictive models; Voltage; Heterojunction bipolar transistors (HBTs); photodetectors; semiconductor device modeling; sensitivity; time-domain analysis;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2007.893891

Filename

4167957