Title :
Intersublevel electroluminescence from In0.4Ga0.6As/GaAs quantum dots in quantum cascade heterostructure with GaAsN/GaAs superlattice
Author :
Fischer, C.H. ; Bhattacharya, P. ; Yu, P.-C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Infrared light emission is demonstrated from In0.4Ga0.6As self-organised quantum dots in a quantum cascade structure incorporating a GaAs/GaAsN chirped superlattice. A TE polarised emission peak is observed at 22 μm, corresponding to the calculated first-excited to ground-state transition. Other emission peaks also correspond to predicted values.
Keywords :
III-V semiconductors; electroluminescence; excited states; gallium arsenide; ground states; indium compounds; light polarisation; quantum cascade lasers; quantum dot lasers; semiconductor quantum dots; semiconductor superlattices; 22 micron; GaAsN-GaAs; GaAsN/GaAs chirped superlattice; In0.4Ga0.6As-GaAs; In0.4Ga0.6As/GaAs self-organised quantum dots; TE polarised emission peak; first-excited to ground-state transition; infrared light emission; intersublevel electroluminescence; quantum cascade heterostructure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030970
