Title :
Drift mobility and mobility-lifetime products in CdTe:Cl grown by the travelling heater method
Author :
Sellin, P.J. ; Davies, A.W. ; Lohstroh, A. ; Özsan, M.E. ; Parkin, J.
Author_Institution :
Dept. of Phys., Univ. of Surrey, Guildford
Abstract :
We report the electron and hole charge transport properties of semi insulating CdTe:Cl grown by the Travelling Heater Method (THM). An alpha-particle Time of Flight (TOF) method was used to measure electron and hole drift mobility, with room temperature values of 880 cm2 /Vs for electrons and 90 cm2/Vs for holes. The variation in mobility was also investigated as a function of temperature, with electron and hole mobilities at 190 K of 1150 cm2 /Vs and 20 cm2/Vs respectively. Using a Hecht analysis the electron and hole mobility-lifetime products were also measured over the same temperature range, with values at room temperature of 8times10-4 cm2/V and 7times10-5 cm 2/V respectively. Time-resolved ion beam induced charge (IBIC) imaging was used to produce micrometer resolution maps of electron drift mobility and signal amplitude, which showed excellent spatial uniformity
Keywords :
II-VI semiconductors; cadmium compounds; carrier lifetime; crystal growth from solution; electron mobility; hole mobility; semiconductor counters; time of flight spectra; CdTe:Cl; Hecht analysis; TOF method; alpha-particle time of flight method; electron charge transport properties; electron drift mobility; hole charge transport properties; hole drift mobility; micrometer resolution maps; mobility-lifetime products; semi insulating CdTe:Cl growth; signal amplitude; temperature function; time-resolved ion beam induced charge imaging; travelling heater method; Charge carrier processes; Electron beams; Electron mobility; Image resolution; Insulation; Ion beams; Signal resolution; Spatial resolution; Temperature distribution; Time measurement; Cadmium telluride; charge transport; time of flight;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2005.855641
