Drift mobility and mobility-lifetime products in CdTe:Cl grown by the travelling heater method

We report the electron and hole charge transport properties of semi insulating CdTe:Cl grown by the Travelling Heater Method (THM). An alpha-particle Time of Flight (TOF) method was used to measure electron and hole drift mobility, with room temperature values of 880 cm² /Vs for electrons and 90 cm²/Vs for holes. The variation in mobility was also investigated as a function of temperature, with electron and hole mobilities at 190 K of 1150 cm² /Vs and 20 cm²/Vs respectively. Using a Hecht analysis the electron and hole mobility-lifetime products were also measured over the same temperature range, with values at room temperature of 8times10^-4 cm²/V and 7times10^-5 cm ²/V respectively. Time-resolved ion beam induced charge (IBIC) imaging was used to produce micrometer resolution maps of electron drift mobility and signal amplitude, which showed excellent spatial uniformity