Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs-GaAs HFETs

Results are presented from gate-lag, transconductance (g_m) frequency dispersion and current deep level transient spectroscopy (I-DLTS) experiments, allowing consistent indications about energy, location, and physical behaviour of deep-level traps in AlGaAs-GaAs heterostructure field-effect transistors (HFETs) to be inferred. Traps responsible for DC-to-RF dispersion effects at operational temperatures are in particular localised and characterised.